SiC MOSFET devices support highly efficient, small form factor, rugged and cost-effective high frequency designs in automotive, renewable energy and data centre power systems

APEC 2019 – Booth #611 - Anaheim, CA – March 18, 2019 – ON Semiconductor, driving energy efficient innovations, has introduced two new silicon carbide (SiC) MOSFET devices. The industrial grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 bring the enabling, wide-ranging performance benefits of wide band gap technology to important high growth end application areas such as Automotive DCDC and onboard charger applications for electric vehicles as well as solar, and uninterruptible and server power supplies.

The announcement sees the strengthening of ON Semiconductor’s comprehensive and growing SiC ecosystem that features complementary devices including SiC diodes and SiC drivers, plus vital resources such as device simulation tools, SPICE models and application information to help design and systems engineers meet their high frequency circuit development challenges.

ON Semiconductor’s 1200 volt (V), 80 milliohm (mΩ), SiC MOSFETs are rugged and align with the needs of modern high frequency designs. They combine high power density with highly efficient operation that can significantly reduce operating costs and overall system size due to smaller device footprints.  These characteristics also mean less thermal management is required, further reducing bill of materials (BoM) costs, size and weight.

Key features and associated design benefits of the new devices include class-leading low leakage current, a fast intrinsic diode with low reverse recovery charge, which gives steep power loss reduction and supports higher frequency operation and greater power density, and low Eon and Eoff / fast turn ON and OFF combined with low forward voltage to reduce total power losses and therefore cooling requirements. Low device capacitance supports the ability to switch at very high frequencies which reduces troublesome EMI issues; meanwhile, higher surge, avalanche capability, and robustness against short-circuits enhances overall ruggedness, gives improved reliability and longer overall life expectancy.

ON Semiconductor’s SiC devices and solutions will be on display at this year’s APEC in Anaheim, CA, and the company plans on launching further wide band gap devices throughout 2019.